FW811 no. a1570-1/4 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. features ? 4v drive. ? composite type, facilitating high-density mounting. speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 35 v gate-to-source voltage v gss 20 v drain current (dc) i d 8a drain current (pw 10s) i d duty cycle 1% 9 a drain current (pw 10 s) i dp duty cycle 1% 52 a allowable power dissipation p d when mounted on ceramic substrate (2000mm 2 0.8mm) 1unit, pw 10s 2.0 w total dissipation p t when mounted on ceramic substrate (2000mm 2 0.8mm), pw 10s 2.2 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 35 v zero-gate voltage drain current i dss v ds =35v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d =8a 2.7 4.5 s static drain-to-source on-state resistance r ds (on)1 i d =8a, v gs =10v 18 24 m r ds (on)2 i d =4a, v gs =4.5v 29 41 m r ds (on)3 i d =4a, v gs =4v 39 55 m marking : w811 continued on next page. ordering number : ena1570 d2409pa tk im tc-00002070 sanyo semiconductors data sheet FW811 n-channel silicon mosfet general-purpose switching device applications www.semiconductor-sanyo.com/network
FW811 no. a1570-2/4 continued from preceding page. parameter symbol conditions ratings unit min typ max input capacitance ciss v ds =20v, f=1mhz 660 pf output capacitance coss v ds =20v, f=1mhz 90 pf reverse transfer capacitance crss v ds =20v, f=1mhz 60 pf turn-on delay time t d (on) see speci ed test circuit. 10 ns rise time t r see speci ed test circuit. 50 ns turn-off delay time t d (off) see speci ed test circuit. 40 ns fall time t f see speci ed test circuit. 40 ns total gate charge qg v ds =20v, v gs =10v, i d =8a 13.0 nc gate-to-source charge qgs v ds =20v, v gs =10v, i d =8a 2.4 nc gate-to-drain ?miller? charge qgd v ds =20v, v gs =10v, i d =8a 3.2 nc diode forward voltage v sd i s =8a, v gs =0v 0.81 1.2 v package dimensions electrical connection unit : mm (typ) 7005a-003 switching time test circuit 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : sop8 1.8 max 4.4 6.0 0.8 0.8 5.0 0.2 0.1 0.3 0.43 1.27 0.7 1.5 14 5 8 8765 1234 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 top view pw=10 s d.c. 1% p. g 50 g s d i d =8a r l =2.5 v dd =20v v out FW811 v in 10v 0v v in
FW811 no. a1570-3/4 gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs i s -- v sd source current, i s -- a diode forward voltage, v sd -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf drain-to-source voltage, v ds -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 3 100 7 5 5 3 2 1000 7 2 35 5 15202530 10 it15286 it15285 it15284 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 it15283 25 c --25 c f=1mhz ciss coss crss ta=75 c 0.01 0.1 2 23 23 57 1.0 2 357 2 3 5 7 2 0.1 1.0 3 5 7 10 v ds =10v ta= - -25 c 75 c v gs =0v 10 2 3 2 3 5 7 100 3 2 5 7 0.1 1.0 2 23 57 10 2 33 57 v dd =20v v gs =10v t d (off) t f t d (on) t r it15281 it15282 0 0 80 16 2 4 6 8 10 12 --60 --40 --20 0 20 40 60 80 100 120 140 160 14 70 60 40 50 20 30 10 0 70 60 20 10 50 40 30 v gs =4.5v, i d =4a v gs =4.0v, i d =4a ta=25 c i d =4a v gs =10.0v, i d =8a it15279 it15280 0 4.5 0.5 0 0 8 7 4 3 6 5 1 2 1.0 0.2 0.3 0.4 0.1 0.5 0.6 0.7 0.8 0.9 0 16 14 1.5 2.5 3.5 1.0 2.0 3.0 4.0 12 10 8 6 2 4 10.0v 4.5v 3.0v v gs =2.5 v --25 c 25 c ta=75 c v ds =10v 3.5v 4.0v 6.0v 8a 16.0v 10 357 25 c 10 7 5 3 2 3
FW811 no. a1570-4/4 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of december, 2009. speci cations and information herein are subject to change without notice. note on usage : since the FW811 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. allowable power dissipation(fet2), p d -- w p d (fet1) -- p d (fet2) allowable power dissipation(fet1), p d -- w ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w a s o drain-to-source voltage, v ds -- v drain current, i d -- a 0.01 0.1 1.0 23 57 23 57 23 57 23 5 10 7 0.01 0.1 1.0 10 100 7 5 3 2 7 5 3 2 7 5 3 2 5 7 3 2 i dp =52a i d =8a 100ms 1ms 10ms 10s 10 s operation in this area is limited by r ds (on). 0 20 40 60 80 100 120 140 160 0 0.5 1.0 1.5 2.5 2.0 2.2 1unit dc operat ion 0 0 0.4 0.8 0.2 0.6 0.4 1.2 1.0 1.2 1.0 0.8 0.2 0.6 1.4 1.8 2.0 1.6 1.4 1.8 1.6 2.2 2.0 2.2 ta=25 c single pulse when mounted on ceramic substrate (2000mm 2 0.8mm) 1unit pw 10 s when mounted on ceramic substrate (2000mm 2 0.8mm) , pw 10s total dissipation when mounted on ceramic substrate (2000mm 2 0.8mm) , pw 10s it15081 it15080 it15079 it15287 0 0 1 2 3 4 5 6 7 13 711 4 10 8 9 25 9 812 610 3 1 v ds =20v i d =8a total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v
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